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Preliminary Technical Information
Polar3 TM HiperFET TM
Power MOSFET
IXFH42N60P3
V DSS
I D25
R DS(on)
= 600V
= 42A
≤ 185m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-247
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
600
V
G
D
S
Tab
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
600
± 30
± 40
V
V
V
G = Gate
S = Source
D
Tab
= Drain
= Drain
I D25
I DM
I A
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
42
100
21
A
A
A
E AS
dv/dt
P D
T J
T JM
T stg
T L
T sold
M d
Weight
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
T C = 25 ° C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
1
35
830
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
6
J
V/ns
W
° C
° C
° C
° C
° C
Nm/lb.in.
g
Features
International Standard Package
Fast Intrinsic Rectifier
Avalanche Rated
Low R DS(ON) and Q G
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
600
V
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
V GS(th)
I GSS
V DS = V GS , I D = 4mA
V GS = ± 30V, V DS = 0V
2.5
4.5
± 100
V
nA
Robotics and Servo Controls
I DSS
V DS = V DSS , V GS = 0V
T J = 125 ° C
25 μ A
1.5 mA
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
185 m Ω
? 2012 IXYS CORPORATION, All Rights Reserved
DS100296B(06/12)
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